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Infineon

BSR316PH6327XTSA1

MFR #BSR316PH6327XTSA1

FPN#BSR316PH6327XTSA1-FL

MFRInfineon

Part DescriptionMOSFET P-Channel 100V 360mA (Ta) 500mW (Tc) Surface Mount, TO-236-3

Legacy ManufacturerCypress Semiconductor

Datasheet
40022-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSR316P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance165pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current360mA (Ta)
Maximum Drain to Source Resistance1.8 Ohm @ 360mA, 10V
Maximum Gate to Source Threshold Voltage1V @ 170µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation500mW (Tc)
Maximum Pulse Drain Current1.44A
Maximum Total Gate Charge7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypePG-SC59-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.6nC
Typical Gate to Source Charge300pC