
onsemi
UJ4C075023K4S
MFR #UJ4C075023K4S
FPN#UJ4C075023K4S-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 750V 66A (Tc) TO247-4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | UJ4C075023K4S |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863), Unknown |
| Reach Status | Compliant |
| Channel Mode | Depletion |
| Configuration | P-Channel |
| Drain Source Voltage | 750V |
| Drive Voltage | 12V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1400pF |
| Input Capacitance Test Voltage | 400V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 66A (Tc) |
| Maximum Drain to Source Resistance | 29 mOhm @ 40A, 12V |
| Maximum Gate to Source Threshold Voltage | 6V @ 10mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 306W (Tc) |
| Maximum Pulse Drain Current | 196A |
| Maximum Total Gate Charge | 37.8nC |
| Maximum Total Gate Charge Test Voltage | 15V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-247-4L |
| Technology | SiCFET (Silicon Carbide) |
| Typical Gate to Drain Charge | 8nC |
| Typical Gate to Source Charge | 11.8nC |
