
UJ4C075023K4S
MFR #UJ4C075023K4S
FPN#UJ4C075023K4S-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 750V 66A (Tc) TO247-4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | UJ4C075023K4S | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | RoHS (2015/863), Unknown | 
| Reach Status | Compliant | 
| Channel Mode | Depletion | 
| Configuration | P-Channel | 
| Drain Source Voltage | 750V | 
| Drive Voltage | 12V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 1400pF | 
| Input Capacitance Test Voltage | 400V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 66A (Tc) | 
| Maximum Drain to Source Resistance | 29 mOhm @ 40A, 12V | 
| Maximum Gate to Source Threshold Voltage | 6V @ 10mA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 306W (Tc) | 
| Maximum Pulse Drain Current | 196A | 
| Maximum Total Gate Charge | 37.8nC | 
| Maximum Total Gate Charge Test Voltage | 15V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-247-4L | 
| Technology | SiCFET (Silicon Carbide) | 
| Typical Gate to Drain Charge | 8nC | 
| Typical Gate to Source Charge | 11.8nC | 
