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SVC6H890N
onsemi

SVC6H890N

MFR #SVC6H890N

FPN#SVC6H890N-FL

MFRonsemi

Part DescriptionPower MOSFET, N-Channel, 80 V, Die Power MOSFET, N-Channel, 80 V, Die, 1-WJAR
Datasheet
61274-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSVC6H890N-DIE
Lifecycle StatusObsolete
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance31000pF
Input Capacitance Test Voltage48V
Life Cycle StatusObsolete
Maximum Continuous Drain Current620A (Ta)
Maximum Drain to Source Resistance530 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3.7V @ 1.4mA
Maximum Junction Temperature175°C (TJ)
Maximum Power DissipationN/A
Maximum Pulse Drain Current2.66kA
Maximum Total Gate Charge485nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDie
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge80nC
Typical Gate to Source Charge104nC