STGD1100LT1G
MFR #STGD1100LT1G
FPN#STGD1100LT1G-FL
MFRonsemi
Part DescriptionPower Switch/Driver 1:1 P-Channel 3.3A 6-TSOP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | STGD1100L |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 8V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±8V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 3.3A (Ta) |
| Maximum Drain to Source Resistance | 55 mOhm @ 1A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 50µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 830mW (Ta) |
| Maximum Pulse Drain Current | 10A |
| Maximum Total Gate Charge | N/A |
| Maximum Total Gate Charge Test Voltage | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |