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STD5406NT4G
onsemi

STD5406NT4G

MFR #STD5406NT4G

FPN#STD5406NT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 40V 12.2A (Ta), 70A (Tc) TO-252-3 T/R
Datasheet
61067-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSTD5406N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2500pF
Input Capacitance Test Voltage32V
Life Cycle StatusObsolete
Maximum Continuous Drain Current12.2A (Ta), 70A (Tc)
Maximum Drain to Source Resistance10 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3W (Ta), 100W (Tc)
Maximum Pulse Drain Current150A
Maximum Total Gate Charge45nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge5.4nC