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STD110N02RT4G
onsemi

STD110N02RT4G

MFR #STD110N02RT4G

FPN#STD110N02RT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 24V 32A (Ta) 1.5W (Ta) 110W (Tc) Surface Mount, TO-252-3
Datasheet
61060-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSTD110N02R
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage24V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3440pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current32A (Ta), 110A (Tc)
Maximum Drain to Source Resistance4.6 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.88W (Ta), 110W (Tc)
Maximum Pulse Drain Current110A
Maximum Total Gate Charge28nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge5.1nC