
SSU1N50BTU
MFR #SSU1N50BTU
FPN#SSU1N50BTU-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 520V 1.3A (Tc) 2.5W (Ta) 26W (Tc) Through Hole, TO-251-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | SSU1N50B |
Packaging Type | Tube |
Packaging Quantity | 5040 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 520V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±30V |
Input Capacitance | 340pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 1.3A (Tc) |
Maximum Drain to Source Resistance | 5.3 Ohm @ 650mA, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2.5W (Ta), 26W (Tc) |
Maximum Pulse Drain Current | 5A |
Maximum Total Gate Charge | 11nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | I-Pak |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.4nC |
Typical Gate to Source Charge | 1.5nC |