
SSU1N50BTU
MFR #SSU1N50BTU
FPN#SSU1N50BTU-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 520V 1.3A (Tc) 2.5W (Ta) 26W (Tc) Through Hole, TO-251-3
Datasheet
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Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | SSU1N50B | 
| Packaging Type | Tube | 
| Packaging Quantity | 5040 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 520V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±30V | 
| Input Capacitance | 340pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 1.3A (Tc) | 
| Maximum Drain to Source Resistance | 5.3 Ohm @ 650mA, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 2.5W (Ta), 26W (Tc) | 
| Maximum Pulse Drain Current | 5A | 
| Maximum Total Gate Charge | 11nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | I-Pak | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 3.4nC | 
| Typical Gate to Source Charge | 1.5nC | 
