SSN1N45BTA
MFR #SSN1N45BTA
FPN#SSN1N45BTA-FL
MFRonsemi
Part DescriptionSmall Signal Field-Effect Transistor, 0.5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | SSN1N45B |
| Packaging Type | Fan-Fold |
| Packaging Quantity | 2000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 450V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±50V |
| Input Capacitance | 240pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 500mA (Tc) |
| Maximum Drain to Source Resistance | 4.25 Ohm @ 250mA, 10V |
| Maximum Gate to Source Threshold Voltage | 3.7V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 4A |
| Maximum Total Gate Charge | 8.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3.2nC |
| Typical Gate to Source Charge | 900pC |