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Infineon

SPD30P06PGBTMA1

MFR #SPD30P06PGBTMA1

FPN#SPD30P06PGBTMA1-FL

MFRInfineon

Part DescriptionMOSFET P-Channel 60V 30A, TO-252-3
Datasheet
60915-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSPD30P06P G
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1535pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current30A
Maximum Drain to Source Resistance75 mOhm @ 21.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 1.7mA
Maximum Junction Temperature175°C
Maximum Power Dissipation125W
Maximum Pulse Drain Current120A
Maximum Total Gate Charge48nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C
Package TypePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13.8nC
Typical Gate to Source Charge3.7nC