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SNSS35200MR6T1G
onsemi

SNSS35200MR6T1G

MFR #SNSS35200MR6T1G

FPN#SNSS35200MR6T1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 35 V 2 A 100MHz 625 mW Surface Mount 6-TSOP
Datasheet
60700-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSS35200MR6T1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth100MHz
Life Cycle StatusObsolete
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage35V
Maximum Collector Emitter Saturation Voltage310mV @ 20mA, 2A
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation625mW
Minimum DC Current Gain100 @ 2A, 3V
Minimum Operating Temperature-55°C (TJ)
Package Type6-TSOP
Technology TypeSI
Transistor TypeSingle