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SMMJT350T1G
onsemi

SMMJT350T1G

MFR #SMMJT350T1G

FPN#SMMJT350T1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 300 V 500 mA - 650 mW Surface Mount SOT-223 (TO-261)
Datasheet
60575-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSMMJT350T1G
Packaging TypeTape and Reel
Packaging Quantity1000
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage300V
Maximum Collector Emitter Saturation VoltageN/A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation650mW
Minimum DC Current Gain30 @ 50mA, 10V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-223 (TO-261)
Technology TypeN/A
Transistor TypeSingle