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SMMBT6427LT1G
onsemi

SMMBT6427LT1G

MFR #SMMBT6427LT1G

FPN#SMMBT6427LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 40 V 500 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
60565-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSMMBT6427LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage40V
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage1.5V @ 500µA, 500mA
Maximum Cutoff Collector Current1µA
Maximum Emitter Base Voltage12V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain20000 @ 100mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle