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SJD32CT4G
onsemi

SJD32CT4G

MFR #SJD32CT4G

FPN#SJD32CT4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor - - - -
Datasheet
60438-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD32C
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Package TypeDPAK
ConfigurationPNP
Gain Bandwidth3MHz
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage1.2V @ 375mA, 3A
Maximum Cutoff Collector Current50µA
Maximum DC Current Gain50 @ 3A, 4V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.56W
Minimum DC Current Gain25 @ 1A, 4V
Minimum Junction Temperature-65°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle