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SI4532DY
onsemi

SI4532DY

MFR #SI4532DY

FPN#SI4532DY-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel 30V 3.9A, 3.5A Surface Mount 8-SOIC
Datasheet
60180-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSI4532DY
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance235pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current3.9A, 3.5A
Maximum Drain to Source Resistance65 mOhm @ 3.9A, 10V, 85 mOhm @ 2.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW
Maximum Pulse Drain Current20A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.8nC
Typical Gate to Source Charge1.7nC