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SGP10N60RUFDTU
onsemi

SGP10N60RUFDTU

MFR #SGP10N60RUFDTU

FPN#SGP10N60RUFDTU-FL

MFRonsemi

Part DescriptionIGBT 600V 16A 75W Through Hole, TO-220-3
Datasheet
60122-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameSGP10N60RUFD
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge30nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current16A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.8V @ 15V, 10A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation75W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-220-3
Pulsed Collector Current30A
Reverse Recovery Time42ns
Switching Off Delay Time36ns
Switching Off Energy215µJ
Switching On Delay Time15ns
Switching On Energy141µJ
Technology TypeN/A