SGH40N60UFTU
MFR #SGH40N60UFTU
FPN#SGH40N60UFTU-FL
MFRonsemi
Part DescriptionIGBT 600 V 40 A 160 W Through Hole TO-3P
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | SGH40N60UF |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 97nC |
| IGBT Type | PT |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 40A |
| Maximum Collector Emitter Breakdown Voltage | 600V |
| Maximum Collector Emitter Saturation Voltage | 2.6V @ 15V, 20A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 160W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-3PN |
| Pulsed Collector Current | 160A |
| Reverse Recovery Time | N/A |
| Switching Off Delay Time | 65ns |
| Switching Off Energy | 200µJ |
| Switching On Delay Time | 15ns |
| Switching On Energy | 160µJ |
| Technology Type | N/A |