onsemi
SGH20N60RUFDTU
MFR #SGH20N60RUFDTU
FPN#SGH20N60RUFDTU-FL
MFRonsemi
Part DescriptionIGBT 600 V 32 A 195 W Through Hole TO-3P
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | SGH20N60RUFD |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-3P |
| Configuration | Single |
| Gate Charge | 80nC |
| IGBT Type | N/A |
| Input Type | Standard |
| Maximum Collector Current | 32A |
| Maximum Collector Emitter Breakdown Voltage | 600V |
| Maximum Collector Emitter Saturation Voltage | 2.8V @ 15V, 20A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 195W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| PK Package Dimensions Note | Popular package size 33% from Suppliers use this Dimension |
| Pulsed Collector Current | 60A |
| Reverse Recovery Time | 50ns |
| Switching Off Delay Time | 48ns |
| Switching Off Energy | 473µJ |
| Switching On Delay Time | 30ns |
| Switching On Energy | 524µJ |
| Technology Type | N/A |