SGF5N150UFTU
MFR #SGF5N150UFTU
FPN#SGF5N150UFTU-FL
MFRonsemi
Part DescriptionInsulated Gate Bipolar Transistor 10A 1500V N-Channel Through Hole, TO-3P-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | SGF5N150UF |
| Packaging Type | Tube |
| Packaging Quantity | 360 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 30nC |
| IGBT Type | N/A |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 10A |
| Maximum Collector Emitter Breakdown Voltage | 1.5kV |
| Maximum Collector Emitter Saturation Voltage | 5.5V @ 10V, 5A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 62.5W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Switching Frequency | N/A |
| Package Type | TO-3PF-3 |
| Pulsed Collector Current | 20A |
| Reverse Recovery Time | N/A |
| Switching Off Delay Time | 30ns |
| Switching Off Energy | 100µJ |
| Switching On Delay Time | 10ns |
| Switching On Energy | 190µJ |
| Technology Type | N/A |