
SFT1345-TL-H
MFR #SFT1345-TL-H
FPN#SFT1345-TL-H-FL
MFRonsemi
Part DescriptionP-Channel 100V 11A (Ta) 1W (Ta), 35W (Tc) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | SFT1345 |
Packaging Type | Tape and Reel |
Packaging Quantity | 700 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 100V |
Drive Voltage | 4V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1020pF |
Input Capacitance Test Voltage | 20V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 11A (Ta) |
Maximum Drain to Source Resistance | 275 mOhm @ 5.5A, 10V |
Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1W (Ta), 35W (Tc) |
Maximum Pulse Drain Current | N/A |
Maximum Total Gate Charge | 21nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | N/A |
Package Type | DPAK/TP-FA |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.6nC |
Typical Gate to Source Charge | 3.6nC |