
onsemi
SESDL2012MX4T5G-ENG
MFR #SESDL2012MX4T5G-ENG
FPN#SESDL2012MX4T5G-ENG-FL
MFRonsemi
Part DescriptionBi-Directional TVS Zener Diode 1.4V 4.1V Surface Mount, 2-DFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Diodes and Rectifiers |
| Family Name | SESDL2012 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | 2-DFN (0.6x0.3) |
| Clamping Voltage | 4.1V |
| Configuration | Single |
| ESD Air Gap Voltage | 16kV |
| ESD Contact Voltage | 16kV |
| Maximum EFT Protection Current | N/A |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Leakage Current | 500nA |
| Maximum Operating Temperature | N/A |
| Maximum Peak Pulse Current | 4.7A |
| Maximum Peak Pulse Power | N/A |
| Maximum Power Dissipation | 313mW |
| Minimum Breakdown Voltage | 1.4V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Number of Bidirectional Channels | 1 |
| Number of Channels | 1 |
| Number of Unidirectional Channels | N/R |
| Polarity | Bi-Directional |
| Power Line Protection | No |
| Test Current | 1mA |
| Tolerance | ±22% |
| Type | Zener |
| Typical Breakdown Voltage | 1.6V |
| Typical Dynamic Resistance | 300 mOhm |
| Typical I O Capacitance | 0.18pF @ 1MHz |
| Typical Reverse Standoff voltage | 1V (Max) |
