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S29GL512T12DHN010
Infineon

S29GL512T12DHN010

MFR #S29GL512T12DHN010

FPN#S29GL512T12DHN010-FL

MFRInfineon

Part DescriptionFLASH - NOR Memory IC 512Mb (64M x 8) Parallel 120 ns 64-FBGA (9x9)

Legacy ManufacturerCypress Semiconductor

Datasheet
59352-Datasheet
Quote Onlymore info
Multiples of: 2600more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategoryMemory
CategoryMemory ICs
Sub CategoryFlash Memories
Family NameS29GL512T
Packaging TypeTray
Packaging Quantity2600
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Address Bus Width25Bits
Block ConfigurationUniform
Command CompatibleYes
Interface TypeCFI
Life Cycle StatusActive
Maximum Access Time120ns
Maximum Chip Erase Time1792s
Maximum Clock FrequencyN/A
Maximum Operating Temperature125°C (TA)
Maximum Supply Erase Current100mA
Maximum Supply Program Current100mA
Maximum Supply Read Current60mA
Maximum Supply Voltage3.6V
Memory Size512Mbit
Minimum Operating Temperature-40°C (TA)
Minimum Supply Voltage2.7V
Organization32M x 16, 64M x 8
Package Type64-FBGA (9x9)
TechnologyFLASH - NOR (SLC)
Timing TypeAsynchronous
Write Cycle Time60ns