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PUMD13,135
NXP

PUMD13,135

MFR #PUMD13,135

FPN#PUMD13,135-FL

MFRNXP

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount, 6-TSSOP
Datasheet
57829-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NamePUMD13
Packaging TypeTape and Reel
Packaging QuantityN/A
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R14.7 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain Bandwidth230MHz, 180MHz
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage100mV @ 250µA, 5mA
Maximum Cutoff Collector Current1µA
Maximum Emitter Base Voltage5V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW
Minimum DC Current Gain100 @ 10mA, 5V
Minimum Junction TemperatureN/A
Package Type6-TSSOP
Resistor Ratio R1 R20.1
Technology TypeN/A
Transistor TypeArray