(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
Nexperia

PUMD12,115

MFR #PUMD12,115

FPN#PUMD12,115-FL

MFRNexperia

Part DescriptionPre-Biased Dual Bipolar Transistor (BJT) 1-NPN 1-PNP 50V 100mA 230MHz 180MHz 300mW Surface Mount, 6-TSSOP
Datasheet
205356-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NamePUMD12
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package Type6-TSSOP
Base Resistance - R147 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain Bandwidth230MHz, 180MHz
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage150mV @ 500µA, 10mA
Maximum Cutoff Collector Current1µA
Maximum Emitter Base Voltage10V
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C (TA)
Maximum Power Dissipation300mW
Minimum DC Current Gain80 @ 5mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating Temperature-65°C (TA)
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeArray