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PCF8896W
onsemi

PCF8896W

MFR #PCF8896W

FPN#PCF8896W-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 15A (Ta) 8-SOIC
Datasheet
122080-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS8896
Packaging TypeWafer
Packaging Quantity1
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2525pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A (Ta)
Maximum Drain to Source Resistance6 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current110A
Maximum Total Gate Charge67nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge7nC