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NZT660A
onsemi

NZT660A

MFR #NZT660A

FPN#NZT660A-FL

MFRonsemi

Part DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Datasheet
57259-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNZT660A
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSOT-223
ConfigurationPNP
Gain Bandwidth75MHz
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage300mV @ 100mA, 1A
Maximum Cutoff Collector Current100nA
Maximum DC Current Gain550 @ 500mA, 2V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation2W
Minimum DC Current Gain250 @ 500mA, 2V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle