
onsemi
NXV08V080DB1
MFR #NXV08V080DB1
FPN#NXV08V080DB1-FL
MFRonsemi
Part DescriptionAutomotive PMIC APM-19-CBC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NXV08V080DB1 |
| Packaging Type | Tube |
| Packaging Quantity | 44 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 6 N-Channel |
| Drain Source Voltage | N/A |
| Drive Voltage | N/A |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | N/A |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | N/A |
| Maximum Drain to Source Resistance | 3.8 mOhm @ 80A, 10V |
| Maximum Gate to Source Threshold Voltage | N/A |
| Maximum Junction Temperature | N/A |
| Maximum Power Dissipation | N/A |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | N/A |
| Maximum Total Gate Charge Test Voltage | N/A |
| Minimum Junction Temperature | N/A |
| Package Type | APM19-CBC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
