
NXV08V080DB1
MFR #NXV08V080DB1
FPN#NXV08V080DB1-FL
MFRonsemi
Part DescriptionAutomotive PMIC APM-19-CBC
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NXV08V080DB1 |
Packaging Type | Tube |
Packaging Quantity | 44 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | 6 N-Channel |
Drain Source Voltage | N/A |
Drive Voltage | N/A |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | N/A |
Input Capacitance | N/A |
Input Capacitance Test Voltage | N/A |
Life Cycle Status | Active |
Maximum Continuous Drain Current | N/A |
Maximum Drain to Source Resistance | 3.8 mOhm @ 80A, 10V |
Maximum Gate to Source Threshold Voltage | N/A |
Maximum Junction Temperature | N/A |
Maximum Power Dissipation | N/A |
Maximum Pulse Drain Current | N/A |
Maximum Total Gate Charge | N/A |
Maximum Total Gate Charge Test Voltage | N/A |
Minimum Junction Temperature | N/A |
Package Type | APM19-CBC |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | N/A |
Typical Gate to Source Charge | N/A |