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onsemi

NXH450B100H4Q2F2SG

MFR #NXH450B100H4Q2F2SG

FPN#NXH450B100H4Q2F2SG-FL

MFRonsemi

Part DescriptionIGBT Module 2 Independent 1000 V 101 A 234 W Chassis Mount 56-PIM (93x47)
Datasheet
57208-Datasheet
Quote Onlymore info
Multiples of: 36more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH450B100H4Q2F2
Packaging TypeTray
Packaging Quantity36
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Configuration2 Independent
IGBT TypeN/A
Input Capacitance9.342F @ 20V
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current101A
Maximum Collector Emitter Breakdown Voltage1kV
Maximum Collector Emitter Saturation Voltage2.25V @ 15V, 150A
Maximum Cutoff Collector Current600µA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation234W
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package Type56-PIM (93x47)