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onsemi

NXH350N100H4Q2F2P1G

MFR #NXH350N100H4Q2F2P1G

FPN#NXH350N100H4Q2F2P1G-FL

MFRonsemi

Part DescriptionIC PWR MODULE 1000V 350A PIM42
Datasheet
148879-Datasheet
Quote Onlymore info
Multiples of: 36more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH350N100H4Q2F2P1G
Packaging TypeTray
Packaging Quantity36
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type42-PIM/Q2PACK (93x47)
ConfigurationThree Level Inverter
IGBT TypeTrench Field Stop
Input Capacitance24146pF @ 20V
Input TypeStandard
Maximum Collector Current303A
Maximum Collector Emitter Breakdown Voltage1kV
Maximum Collector Emitter Saturation Voltage2.3V @ 15V, 375A
Maximum Cutoff Collector Current1mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation276W
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
NTC ThermistorYes