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onsemi

NXH027B120MNF2PTG

MFR #NXH027B120MNF2PTG

FPN#NXH027B120MNF2PTG-FL

MFRonsemi

Part DescriptionSilicon Boost module contains three parallel 80 m, 1200 V SiC MOSFET
Datasheet
150206-Datasheet
Quote Onlymore info
Multiples of: 20more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH027B120MNF2PTG
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeDepletion
Configuration3 N-Channel
Drain Source Voltage1.2kV
Drive Voltage20V
FET FeatureSilicon Carbide (SiC)
FET OptionsN/R
FET TypeArray
Gate to Source Voltage+22V, -6V
Input Capacitance3687pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current84A (Tc)
Maximum Drain to Source Resistance38 mOhm @ 60A, 20V
Maximum Gate to Source Threshold Voltage4.9V @ 13.2mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation134W
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge135.7nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction TemperatureN/A
Package TypeN/A
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A