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onsemi

NXH020U90MNF2PTG

MFR #NXH020U90MNF2PTG

FPN#NXH020U90MNF2PTG-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 900V 149A
Datasheet
99200-Datasheet
Quote Onlymore info
Multiples of: 20more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH020U90MNF2PTG
Packaging TypeTray
Packaging Quantity20
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusCompliant
Package TypeN/A
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage900V
Drive Voltage15V
FET FeatureSilicon Carbide (SiC)
FET OptionsN/R
FET TypeArray
Gate to Source Voltage+18V, -8V
Input Capacitance7007pF
Input Capacitance Test Voltage450V
Maximum Continuous Drain Current149A (Tc)
Maximum Drain to Source Resistance14 mOhm @ 100A, 15V
Maximum Gate to Source Threshold Voltage4.3V @ 40mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation352W (Tj)
Maximum Pulse Drain Current447A
Maximum Total Gate Charge546.4nC
Maximum Total Gate Charge Test Voltage15V
Minimum Junction Temperature-40°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge122.7nC
Typical Gate to Source Charge105.45nC