onsemi
NXH010P120MNF1PNG
MFR #NXH010P120MNF1PNG
FPN#NXH010P120MNF1PNG-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 1200V 114A
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NXH010P120MNF1PNG |
| Packaging Type | Tray |
| Packaging Quantity | 28 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | N/A |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 1.2kV |
| Drive Voltage | 20V |
| FET Feature | Silicon Carbide (SiC) |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | +25V, -15V |
| Input Capacitance | 4707pF |
| Input Capacitance Test Voltage | 800V |
| Maximum Continuous Drain Current | 114A (Tc) |
| Maximum Drain to Source Resistance | 14 mOhm @ 100A, 20V |
| Maximum Gate to Source Threshold Voltage | 4.3V @ 40mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 413W (Tc) |
| Maximum Pulse Drain Current | 228A |
| Maximum Total Gate Charge | 454nC |
| Maximum Total Gate Charge Test Voltage | 20V |
| Minimum Junction Temperature | -40°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 131nC |
| Typical Gate to Source Charge | 129nC |