(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NXH004P120M3F2PTHG

MFR #NXH004P120M3F2PTHG

FPN#NXH004P120M3F2PTHG-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 1.2kV 284A (Tc) Module
Datasheet
99199-Datasheet
Quote Onlymore info
Multiples of: 20more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNXH004P120M3F2PTHG
Packaging TypeTray
Packaging Quantity20
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage1.2kV
Drive Voltage18V
FET FeatureStandard
FET OptionsHalf Bridge
FET TypeArray
Gate to Source Voltage+22V, -10V
Input Capacitance16410pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current284A (Tc)
Maximum Drain to Source Resistance5.5 mOhm @ 200A, 18V
Maximum Gate to Source Threshold Voltage4.4V @ 120mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation785W (Tc)
Maximum Pulse Drain Current568A
Maximum Total Gate Charge876nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-40°C (TJ)
Package Type36-PIM (56.7x62.8)
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge165nC
Typical Gate to Source Charge174nC