(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NVVR26A120M1WSS

MFR #NVVR26A120M1WSS

FPN#NVVR26A120M1WSS-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 1.2kV 400A (Tj) 15-DIP
Datasheet
164826-Datasheet
Quote Onlymore info
Multiples of: 6more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVVR26A120M1WSS
Packaging TypeTube
Packaging Quantity6
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage1.2kV
Drive Voltage20V
FET FeatureStandard
FET OptionsHalf Bridge
FET TypeArray
Gate to Source Voltage+25V, -10V
Input Capacitance31700pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current400A (Tj)
Maximum Drain to Source Resistance2.6 mOhm @ 400A, 20V
Maximum Gate to Source Threshold Voltage3.2V @ 150mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1kW (Tj)
Maximum Pulse Drain Current800A
Maximum Total Gate Charge1.75µC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-40°C (TJ)
Package TypeAHPM15-CDI
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A