
NVVR26A120M1WSS
MFR #NVVR26A120M1WSS
FPN#NVVR26A120M1WSS-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 1.2kV 400A (Tj) 15-DIP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVVR26A120M1WSS | 
| Packaging Type | Tube | 
| Packaging Quantity | 6 | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | 2 N-Channel | 
| Drain Source Voltage | 1.2kV | 
| Drive Voltage | 20V | 
| FET Feature | Standard | 
| FET Options | Half Bridge | 
| FET Type | Array | 
| Gate to Source Voltage | +25V, -10V | 
| Input Capacitance | 31700pF | 
| Input Capacitance Test Voltage | 800V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 400A (Tj) | 
| Maximum Drain to Source Resistance | 2.6 mOhm @ 400A, 20V | 
| Maximum Gate to Source Threshold Voltage | 3.2V @ 150mA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Power Dissipation | 1kW (Tj) | 
| Maximum Pulse Drain Current | 800A | 
| Maximum Total Gate Charge | 1.75µC | 
| Maximum Total Gate Charge Test Voltage | 20V | 
| Minimum Junction Temperature | -40°C (TJ) | 
| Package Type | AHPM15-CDI | 
| Technology | SiC (Silicon Carbide Junction Transistor) | 
| Typical Gate to Drain Charge | N/A | 
| Typical Gate to Source Charge | N/A | 
