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NVTR01P02LT1G
onsemi

NVTR01P02LT1G

MFR #NVTR01P02LT1G

FPN#NVTR01P02LT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 1.3A(Ta) 400mW(Ta) Surface Mount, TO-236-2
Datasheet
81997-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTR01P02L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance225pF
Input Capacitance Test Voltage5V
Life Cycle StatusActive
Maximum Continuous Drain Current1.3A (Ta)
Maximum Drain to Source Resistance220 mOhm @ 750mA, 4.5V
Maximum Gate to Source Threshold Voltage1.25V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation400mW (Ta)
Maximum Pulse Drain Current4A
Maximum Total Gate Charge3.1nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A