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NVTFWS9D6P04M8LTAG
onsemi

NVTFWS9D6P04M8LTAG

MFR #NVTFWS9D6P04M8LTAG

FPN#NVTFWS9D6P04M8LTAG-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 13A (Ta), 64A (Tc) 8-SON
Datasheet
96941-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFWS9D6P04M8L
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2312pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 64A (Tc)
Maximum Drain to Source Resistance9.5 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 580µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 75W (Tc)
Maximum Pulse Drain Current311A
Maximum Total Gate Charge34.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.1nC
Typical Gate to Source Charge6.9nC