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NVTFWS027N10MCLTAG
onsemi

NVTFWS027N10MCLTAG

MFR #NVTFWS027N10MCLTAG

FPN#NVTFWS027N10MCLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 7.4A(Ta) 28A(Tc) 3.1W(Ta) 46W(Tc) Surface Mount, 8-WDFN
Datasheet
100896-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFS027N10MCL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance800pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current7.4A (Ta), 28A (Tc)
Maximum Drain to Source Resistance26 mOhm @ 7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 38µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.1W (Ta), 46W (Tc)
Maximum Pulse Drain Current119A
Maximum Total Gate Charge11.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.2nC
Typical Gate to Source Charge2.1nC