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NVTFS6H888NLTAG
onsemi

NVTFS6H888NLTAG

MFR #NVTFS6H888NLTAG

FPN#NVTFS6H888NLTAG-FL

MFRonsemi

Part DescriptionN-Channel 80 V 4.9A (Ta), 14A (Tc) 2.9W (Ta), 23W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
57180-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFS6H888NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance258pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current4.9A (Ta), 14A (Tc)
Maximum Drain to Source Resistance50 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 15µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.9W (Ta), 23W (Tc)
Maximum Pulse Drain Current49A
Maximum Total Gate Charge6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC
Typical Gate to Source Charge1.2nC