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NVTFS4C25NTAG
onsemi

NVTFS4C25NTAG

MFR #NVTFS4C25NTAG

FPN#NVTFS4C25NTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 10.1A (Ta), 22.1A (Tc) 8-SON
Datasheet
57157-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFS4C25N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance500pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current10.1A (Ta), 22.1A (Tc)
Maximum Drain to Source Resistance17 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3W (Ta), 14.3W (Tc)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge10.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge2.7nC