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NVTFS4824NTWG
MFR #NVTFS4824NTWG
FPN#NVTFS4824NTWG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 18.2A (Ta) 8-SON T/R
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVTFS4824N |
Packaging Type | Tape and Reel |
Packaging Quantity | 5000 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1740pF |
Input Capacitance Test Voltage | 12V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 18.2A (Ta) |
Maximum Drain to Source Resistance | 4.7 mOhm @ 23A, 10V |
Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.2W (Ta), 21W (Tc) |
Maximum Pulse Drain Current | 402A |
Maximum Total Gate Charge | 14nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-WDFN (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 5nC |
Typical Gate to Source Charge | 5.3nC |