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NVTFS005N04CTAG
onsemi

NVTFS005N04CTAG

MFR #NVTFS005N04CTAG

FPN#NVTFS005N04CTAG-FL

MFRonsemi

Part DescriptionN-Channel 40 V 17A (Ta), 69A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
57154-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVTFS005N04C
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1000pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current17A (Ta), 69A (Tc)
Maximum Drain to Source Resistance5.6 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 40µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 50W (Tc)
Maximum Pulse Drain Current297A
Maximum Total Gate Charge16nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge5.7nC