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NVR5198NLT1G
onsemi

NVR5198NLT1G

MFR #NVR5198NLT1G

FPN#NVR5198NLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 1.7A(Ta) 900mW(Ta) Surface Mount, TO-236-3
Datasheet
57148-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVR5198NL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance182pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current1.7A (Ta)
Maximum Drain to Source Resistance155 mOhm @ 1A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current27A
Maximum Total Gate Charge5.1nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge800pC