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NVMYS1D7N04CT1G
onsemi

NVMYS1D7N04CT1G

MFR #NVMYS1D7N04CT1G

FPN#NVMYS1D7N04CT1G-FL

MFRonsemi

Part DescriptionN-Channel 40 V 36.6A (Ta), 190A (Tc) 3.9W (Ta), 107.1W (Tc) Surface Mount LFPAK4
Datasheet
57142-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMYS1D7N04C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3125pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current36.6A (Ta), 190A (Tc)
Maximum Drain to Source Resistance1.7 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 210µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 107.1W (Tc)
Maximum Pulse Drain Current1.237kA
Maximum Total Gate Charge50nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type4-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14.4nC
Typical Gate to Source Charge14.5nC