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NVMYS029N08LHTWG
onsemi

NVMYS029N08LHTWG

MFR #NVMYS029N08LHTWG

FPN#NVMYS029N08LHTWG-FL

MFRonsemi

Part DescriptionN-Channel 80 V 7A (Ta), 22A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount LFPAK4 (5x6)
Datasheet
57139-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMYS029N08LH
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance431pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current7A (Ta), 22A (Tc)
Maximum Drain to Source Resistance29 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.5W (Ta), 33W (Tc)
Maximum Pulse Drain Current97A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type4-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge1.7nC