NVMYS021N06CLTWG
MFR #NVMYS021N06CLTWG
FPN#NVMYS021N06CLTWG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 9.8A (Ta), 27A (Tc) SOT-1023 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVMYS021N06CL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active (NRND) |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 410pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 9.8A (Ta), 27A (Tc) |
| Maximum Drain to Source Resistance | 21 mOhm @ 10A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 16µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.8W (Ta), 28W (Tc) |
| Maximum Pulse Drain Current | 131A |
| Maximum Total Gate Charge | 5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 4-LFPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 500pC |
| Typical Gate to Source Charge | 1nC |