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NVMYS008N08LHTWG
onsemi

NVMYS008N08LHTWG

MFR #NVMYS008N08LHTWG

FPN#NVMYS008N08LHTWG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 80V 13A (Ta), 59A (Tc) SOT-1023
Datasheet
57134-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMYS008N08LH
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1420pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current13A (Ta), 59A (Tc)
Maximum Drain to Source Resistance8.8 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2V @ 70µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 73W (Tc)
Maximum Pulse Drain Current319A
Maximum Total Gate Charge25nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type4-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge4.6nC