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NVMTS0D7N04CLTXG
onsemi

NVMTS0D7N04CLTXG

MFR #NVMTS0D7N04CLTXG

FPN#NVMTS0D7N04CLTXG-FL

MFRonsemi

Part DescriptionAFSM T6 40V LL NCH
Datasheet
164624-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMTS0D7N04CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-DFNW (8.3x8.4)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12238pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current67A (Ta), 433A (Tc)
Maximum Drain to Source Resistance630 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation4.9W (Ta), 205W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge99nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge32nC
Typical Gate to Source Charge31nC