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NVMJS3D0N06CTWG
onsemi

NVMJS3D0N06CTWG

MFR #NVMJS3D0N06CTWG

FPN#NVMJS3D0N06CTWG-FL

MFRonsemi

Part DescriptionT6 60V SL LFPAK8 5X6
Datasheet
99164-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMJS3D0N06C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-LFPAK
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2675pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current26.9A (Ta), 139.3A (Tc)
Maximum Drain to Source Resistance2.9 mOhm @ 27A, 10V
Maximum Gate to Source Threshold Voltage4V @ 135µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation4.2W (Ta), 112.5W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.5nC
Typical Gate to Source Charge11nC