(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVMJD012N06CLTWG
onsemi

NVMJD012N06CLTWG

MFR #NVMJD012N06CLTWG

FPN#NVMJD012N06CLTWG-FL

MFRonsemi

Part DescriptionMOSFET Array 60V 11.5A(Ta) 42A(Tc) 3.2W(Ta) 42W(Tc) Surface Mount, 8-LFPAK
Datasheet
164607-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMJD012N06CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-LFPAK
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance792pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current11.5A (Ta), 42A (Tc)
Maximum Drain to Source Resistance11.9 mOhm @ 25A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 30µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.2W (Ta), 42W (Tc)
Maximum Pulse Drain Current153A
Maximum Total Gate Charge11.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge2.3nC