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onsemi

NVMFWS3D0P04M8LT1G

MFR #NVMFWS3D0P04M8LT1G

FPN#NVMFWS3D0P04M8LT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 28A(Ta) 183A(Tc) 3.9W(Ta) 171W(Tc) Surface Mount, 5-DFN
Datasheet
123030-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS3D0P04M8L
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5827pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current28A (Ta), 183A (Tc)
Maximum Drain to Source Resistance2.7 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 2mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 171W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge124nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17.3nC
Typical Gate to Source Charge21.6nC