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onsemi

NVMFWS025P04M8LT1G

MFR #NVMFWS025P04M8LT1G

FPN#NVMFWS025P04M8LT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 9.4A(Ta) 34.6A(Tc) 3.5W(Ta) 44.1W(Tc) Surface Mount, 5-DFN
Datasheet
99158-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS025P04M8L
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1058pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current9.4A (Ta), 34.6A (Tc)
Maximum Drain to Source Resistance23 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 255µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.5W (Ta), 44.1W (Tc)
Maximum Pulse Drain Current204A
Maximum Total Gate Charge16.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.55nC
Typical Gate to Source Charge3.4nC